< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내 >

개최일시 : 2015년 11월 5일 목요일 16:30 ~ 17:30

개최장소 : 제2공학관 B037

세미나 제목 : Special Characterization Techniques for Ultrathin SOI-like Materials and Devices

발표초록 :

It is clear that from now on the MOS transistor will operate in fully depleted mode. Electrostatic considerations request sub-10 nm thick body in at least one direction, vertical or lateral. A second gate and an oxide underneath the body are clear assets for back-biasing schemes and dielectric isolation. Nanosize SOI-like materials and devices feature two oxides, three interfaces and two possible channels, more or less overlapped. This complexity cannot be addressed with conventional characterization methods developed for bulk-Si devices. We review especially developed techniques that are efficient for the evaluation of SOI wafers and MOS structures (transistors and gated diodes). The latest advances in pseudo-MOSFET method will be described and selected examples will illustrate the properties of recent materials (UTBB, GeOI, sSOI, III-VOI, etc). The gated diode is a powerful characterization tool that complements the sophisticated MOSFET methods (split capacitance, current transients, noise, magnetoresistance, etc.).  We will discuss typical data for SOI as well as more unusual results induced by the coupling and floating body mechanisms. Size effects (ultrathin film and short-channel) are shown to affect the interpretation of mobility and threshold voltage.

강연자 : Sorin Cristoloveanu / IMEP-LAHC, Grenoble Institute of Technology

초청자 : 전기전자공학과 교수 안종현